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13 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 9-3 - 3-- - 9566, fax. 1 - 9-3 - 3-- - 3
-8 www.americanmicrosemi.com document page 1 of 1 revised 06/2013 description sym. min max unit emitter to base voltage v ebo 3.5 v i ebo =100 a collector to emitter voltage i c = 10ma, i b = 0 v ceo 30 v i c = 10ma, r = 10 ohms v cer 55 collector cutoff current i cex 1.0 ma v ce = 55v, v be = - 1.5v dc current gain h fe 20 150 v ce = 5.0v, i c = 100ma high frequency current gain h fe 3.2 i c = 100ma, v ce = 5v, f = 500mhz output capacitance c ob 1.8 2.5 pf v cb = 30v, f = 1.0mhz power output (collector eff. 25% min.) p (out) 1.0 w v ce =28v, p (in) =300mw, f=2.0ghz in vendor's test circuit noise figure nf 5.0 db rf power gain p g 15 db f=400mhz, p out = - 10dbm hermetically sealed ceramic - metal stud stripline package. features maximum ratings electrical characteristics ( @ 25c unless otherwise specified) description sym. value unit collector - to - base voltage: v cbo 55 v collector - to - emitter voltage: v ceo 30 v emitter - to - base voltage: v ebo 3.5 v collector current: i c 200 ma power dissipation @ 25 c stud temp.: 5 w thermal resistance (junction - to - stud): jc 35 ?/w operating junction temperature: t j - 65 to +200 ? storage temperature: t stg - 65 to +200 ? stud torque: 7 in - lbs. image serves as a representation only drawing (top/side)
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